Diodes ZTX953 Manuel d'utilisateur télécharger pdf

PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 4  JUNE 94

FEATURES

* 3.5 Amps continuous current

* Up to 10 Amps peak current

* Very low saturation voltage

* Excellent gain up to 10 Amps

* Spice model available

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-140 V

Collector-Emitter Voltage V

CEO

-100 V

Emitter-Base Voltage V

EBO

-6 V

Peak Pulse Current I

-10 A

Continuous Collector Current I

-3.5 A

Practical Power Dissipation* P

totp

1.58 W

Power Dissipation at T

amb

=25°C P

tot

1.2 W

Operating and Storage Temperature Range T

stg

-55 to +200 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

(BR)CBO

-140 -170 V

=-100µA

Collector-Emitter Breakdown

Voltag

(BR)CER

-140 -170 V

IC=-1

µA, RB ≤1KΩ

Collector-Emitter Breakdown

Voltage

(BR)CEO

-100 -120 V I

=-10mA*

Emitter-Base Breakdown

Voltage

(BR)EBO

-6 -8 V

=-100µA

Collector Cut-Off Current I

CBO

-50

-1

µA

=-100V

=-100V, T

amb

=100°C

Collector Cut-Off Current I

CER

R ≤1KΩ

-50

-1

µA

=-100V

=-100V, T

amb

=100°C

Emitter Cut-Off Current I

EBO

-10 nA V

=-6V

Collector-Emitter Saturation

Voltage

CE(sat)

-20

-80

-140

-250

-50

-100

-170

-330

=-100mA, I

=-10mA*

=-1A, I

=-100mA*

=-2A, I

=-200mA*

=-4A, I

=-400mA*

Base-Emitter

Saturation Voltage

BE(sat)

-960 -1100 mV I

=-4A, I

=-400mA*

E-Line

TO92 Compatible

ZTX953

3-318

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Base-Emitter

Turn-On Voltage

BE(on)

-880 -1100 mV IC=-4A, V

=-1V*

Static Forward

Current Transfer

100

200

300

=-10mA, V

=-1V*

=-1A, V

=-1V*

=-3A, V

=-1V*

=-4A, V

=-1V*

=-10A, V

=-1V*

Transition Frequency f

125 MHz I

=-100mA, V

=-10V

f=50MHz

Output Capacitance C

obo

65 pF V

=-10V, f=1MHz

Switching Times t

off

110

460

=-2A, I

=-200mA

=200mA, V

=-10V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance: Junction to Ambient

Junction to Case

th(j-amb)

th(j-case)

150

°C/W

ZTX953

-40

2.0

1.0

0.0001

150

100

Derating curve

T -Temperature (°C)

ower

iss

ipa

tion

)

Maximum transient thermal impedance

Pulse Width (seconds)

Thermal Resistance (°C/W)

10 10010.10.01

4.0

3.0

-20 0 20

40 60 80 100 120 200180160140

D=t

Case te

mperatu

Ambien

t t

empe

rat

ure

D.C.

D=0.6

D=0.2

D=0.1

Single Pulse

0.001

D=0.05

3-319

1 2 3

Résumé du contenu

Page 1 - HIGH CURRENT TRANSISTOR

PNP SILICON PLANAR MEDIUM POWERHIGH CURRENT TRANSISTORISSUE 4  JUNE 94FEATURES* 3.5 Amps continuous current* Up to 10 Amps peak current* Very low sat

Page 2

PNP SILICON PLANAR MEDIUM POWERHIGH CURRENT TRANSISTORISSUE 4  JUNE 94FEATURES* 3.5 Amps continuous current* Up to 10 Amps peak current* Very low sat

Page 3 - TYPICAL CHARACTERISTICS

-55°C +25°C +100°C +175°C +100°C +25°C -55°C0.01 0.1 201101.00.80.60.400.21.61.41.20.01 0.1 2011

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Diodes ZTX953 Manuel d'utilisateur

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