SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (I
C
)
APPLICATIONS
* Ideally suited for space / weight critical applications
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Base Current I
B
-200 mA
Power Dissipation at T
amb
=25°C P
tot
500 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80 V
I
C
=-100µA, I
E
=-0
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
-60 V I
C
=-10mA*, I
B
=-0
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V
I
E
=-100µA, I
C
=-0
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-60V
Collector Cut-Off Current I
CES
-100 nA VCE=-60V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V, I
C
=-0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.6
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.2 V I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-1.0 V IC=-1A, V
CE
=-5V*
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
SOT323
ZUMT591
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Static Forward Current
Transfer Ratio
h
FE
100
100
80
15
300
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition Frequency f
T
150 MHz I
C
=-50mA, V
CE
=-10V*
f=100MHz
Ouput Capacitance C
obo
10 pF V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
NOTE
This data is derived from development material and does not necessarily mean that the device will
go into production
ZUMT591
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used,
applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products
or services concerned. The Company reserves the right to alter without notice the specification,
design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
SEMICONDUCTORS
(7 pages)
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