Diodes ZXTN2011G Manuel d'utilisateur télécharger pdf

SEMICONDUCTORS

SUMMARY

CEO

= 100V : R

SAT

= 36m ; I

= 6A

DESCRIPTION

Packaged in the SOT223 outline this new low saturation 100V NPN transistor

offers extremely low on state losses making it ideal for use in DC-DC circuits

and various driving and power management functions.

FEATURES

•

6 amps continuous current

•

Up to 10 amps peak current

•

Very low saturation voltages

APPLICATIONS

•

Motor driving

•

Line switching

•

High side switches

•

Subscriber line interface cards (SLIC)

DEVICE MARKING

ZXTN

2011

ZXTN2011G

ISSUE 2 - MAY 2006

100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION

TRANSISTOR IN SOT223

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY PER

REEL

ZXTN2011GTA 7” 12mm

embossed

1,000 units

ZXTN2011GTC 13” 4,000 units

ORDERING INFORMATION

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ZXTN2011G 1

Résumé du contenu

Page 1 - ZXTN2011G

1SEMICONDUCTORSSUMMARYBVCEO= 100V : RSAT= 36m ; IC= 6ADESCRIPTIONPackaged in the SOT223 outline this new low saturation 100V NPN transistoroffers extr

Page 2

ZXTN2011GSEMICONDUCTORSISSUE 2 - MAY 20062PARAMETER SYMBOL VALUE UNITJunction to ambient(a)R⍜JA42 °C/WNOTES(a) For a device surface mounted on 52mm x

Page 3

ZXTN2011GSEMICONDUCTORSISSUE 2 - MAY 20063CHARACTERISTICS

Page 4

ZXTN2011GSEMICONDUCTORSISSUE 2 - MAY 20064PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSCollector-base breakdown voltage BVCBO200 235 V IC=100␮AColle

Page 5

ZXTN2011GSEMICONDUCTORSISSUE 2 - MAY 20065TYPICAL CHARACTERISTICS

Page 6

ZXTN2011GSEMICONDUCTORS6ISSUE 2 - MAY 2006EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49

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