Diodes ZXTN2018F Manuel d'utilisateur télécharger pdf

Issue 2 - September 2005 1 www.zetex.com

ZXTN2018F

60V, SOT23, NPN medium power transistor

Summary

(BR)CEV

> 140V, V

(BR)CEO

> 60V

C(cont)

= 5A

CE(sat)

= 25 m⍀ typical

CE(sat)

< 45 mV @ 1A

= 1.2W

Complementary part number : ZXTP2027F

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• Higher power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 140V forward blocking voltage

Applications

• MOSFET and IGBT gate driving

• Motor drive

• Relay, lamp and solenoid drive

Ordering information

Device marking

851

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXTN2018FTA 7 8 3,000

Pinout - top view

1 2 3 4 5 6

ZXTN2018F 1

Résumé du contenu

Page 1 - ZXTN2018F

Issue 2 - September 2005 1 www.zetex.com© Zetex Semiconductors plc 2005ZXTN2018F60V, SOT23, NPN medium power transistorSummaryV(BR)CEV > 140V, V(BR

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ZXTN2018FIssue 2 - September 2005 2 www.zetex.com© Zetex Semiconductors plc 2005Absolute maximum ratingsThermal resistanceParameter Symbol Limit UnitC

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ZXTN2018FIssue 2 - September 2005 4 www.zetex.com© Zetex Semiconductors plc 2005Electrical characteristics (at Tamb = 25°C unless otherwise stated)Par

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ZXTN2018FIssue 2 - September 2005 6 www.zetex.com© Zetex Semiconductors plc 2005These offices are supported by agents and distributors in major countr

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