1SEMICONDUCTORSSUMMARYBVCEO= -100V : RSAT= 67m ; IC= -5ADESCRIPTIONPackaged in the D-Pak outline this high current high performance 100V PNPtransistor
ZXT953KSEMICONDUCTORSISSUE 1 - DECEMBER 20032PARAMETER SYMBOL VALUE UNITJunction to ambient(a)R⍜JA59 °C/WJunction to ambient(b)R⍜JA39 °C/WJunction to
ZXT953KSEMICONDUCTORSISSUE 1 - DECEMBER 20033CHARACTERISTICS
ZXT953KSEMICONDUCTORSISSUE 1 - DECEMBER 20034PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSCollector-base breakdown voltage BVCBO-140 -170 V IC= -100
ZXT953KSEMICONDUCTORSISSUE 1 - DECEMBER 20035TYPICAL CHARACTERISTICS
ZXT953KSEMICONDUCTORS6ISSUE 1 - DECEMBER 2003EuropeZetex plcFields New RoadChaddertonOldham, OL9 8NPUnited KingdomTelephone (44) 161 622 4444Fax: (44)
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