BZT52C2V4LP - BZT52C39LP
Document number: DS30506 Rev. 20 - 2
2 of 5
www.diodes.com
December 2013
© Diodes Incorporated
BZT52C2V4LP - BZT52C39LP
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Forward Voltage (Note 5) @ I
F
= 10mA V
F
0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) T
A
= +25°C P
D
250 mW
Thermal Resistance, Junction to Ambient Air (Note 6) T
A
= +25°C R
θJA
500
C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Type
Number
Marking
Code
Zener Voltage Range
(Note 5)
Maximum Zener Impedance
f = 1kHz
Maximum
Reverse
Current
(Note 5)
Typical
Temperature
Coefficient
@ I
ZTC
mV/C
Test
Current
I
ZTC
V
Z
@ I
ZT
I
ZT
Z
ZT
@ I
ZT
Z
Z
@ I
ZK
I
Z
I
R
@ V
R
Nom (V) Min (V) Max (V) mA
mA uA V Min Max mA
BZT52C2V4LP WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5
BZT52C2V7LP W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5
BZT52C3V0LP W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5
BZT52C3V3LP W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5
BZT52C3V6LP W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5
BZT52C3V9LP W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5
BZT52C4V3LP W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5
BZT52C4V7LP W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5
BZT52C5V1LP 9Y 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5
BZT52C5V6LP 9A 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5
BZT52C6V2LP 9B 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5
BZT52C6V8LP
(Note 7)
9C 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5
BZT52C7V5LP 9D 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5
BZT52C8V2LP 9E 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5
BZT52C9V1LP 9F 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5
BZT52C10LP 9G 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5
BZT52C11LP 9H 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5
BZT52C12LP 9J 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5
BZT52C13LP 9K 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5
BZT52C15LP 9L 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5
BZT52C16LP 9M 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5
BZT52C18LP 9N 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5
BZT52C20LP 9P 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5
BZT52C22LP 9R 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 - 5
BZT52C24LP 9S 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 - 5
BZT52C36LP 9W 36 34.0 38.0 2 90 350 0.5 0.1 25.2 36.5 - 5
BZT52C39LP 9X 39 37.0 41.0 2 130 350 0.5 0.1 27.3 36.8 - 5
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at http://www.diodes.com.
7. Device can withstand a repetitive, 1A pulse with tp = 300μs and T = 3s (forward or reverse direction).
(5 pages)
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