Diodes 2DD2098R Manuel d'utilisateur

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2DD2098R2DD2098R
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Resistance R
CE(SAT)
= 75mΩ at 4A
Complementary PNP Type Available (2DB1386)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
DS31299 Rev. 4 - 2
1 of 4
www.diodes.com
2DD2098R
© Diodes Incorporated
NEW P PRORODUCUCT EW D T
SOT89-3L
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
B
A
S
E
4
3
2
1
C
C
B
E
T
O
P
V
I
E
W
Schematic and Pin Configuration
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
6 V
Peak Pulse Current
I
CM
10 A
Continuous Collector Current
I
C
5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
R
θ
JA
125 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
50
V
I
C
= 50μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
20
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6
V
I
E
= 50μA, I
C
= 0
Collector Cut-Off Current
I
CBO
0.5
μA
V
CB
= 40V, I
E
= 0
Emitter Cut-Off Current
I
EBO
0.5
μA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3 1.0 V
I
C
= 4A, I
B
= 0.1A
DC Current Gain
h
FE
180
390
I
C
= 0.5A, V
CE
= 2V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
220
MHz
V
CE
= 6V, I
E
= -50mA
f = 100MHz
Output Capacitance
C
ob
14
pF
V
CB
= 20V, I
E
= 0,
f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
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Résumé du contenu

Page 1 - 2DD2098R2DD2098R

2DD2098R2DD2098R LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Resist

Page 2 - NEW PRODUCT

00.20.425 5075100 125150P, POWER DISSIPATION (W)DT , AMBIENT TEMPERATURE (°C)Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)A0.60.81.00R

Page 3 - (Top View)

-I , EMITTER CURRENT (mA)EFig. 8 Typical Gain-Bandwidth Product vs. Emitter Current0102030405060708090100050100150200250300V = 6Vf = 100MHzCE 0.1

Page 4 - Suggested Pad Layout

DS31299 Rev. 4 - 2 4 of 4 www.diodes.com 2DD2098R © Diodes Incorporated Suggested Pad Layout 3.00.92.70.41.71.31.9Unit: mm NEW PRODUCT IMP

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