Diodes 2DD2652 Manuel d'utilisateur

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2DD2652
Document number: DS31633 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2652
NEW PRODUCT
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary PNP Type Available (2DB1689)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current - Continuous
I
C
1.5 A
Peak Pulse Collector Current
I
CM
3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
R
θ
JA
417
°C/W
Power Dissipation (Note 4) @ T
A
= 25°C P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
R
θ
JA
250
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
15
V
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
V
(
BR
)
CEO
12
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
6
V
I
E
= 10μA, I
C
= 0
Collector Cut-Off Current
I
CBO
0.1
μA
V
CB
= 15V, I
E
= 0
Emitter Cut-Off Current
I
EBO
0.1
μA
V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V
CE
(
SAT
)
80 200 mV
I
C
= 500mA, I
B
= 25mA
DC Current Gain
h
FE
270
680
V
CE
= 2V, I
C
= 200mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
11
pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Current Gain-Bandwidth Product
f
T
260
MHz
V
CE
= 2V, I
C
= 100mA,
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Top View Device Schematic
E
B
C
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Résumé du contenu

Page 1

2DD2652 Document number: DS31633 Rev. 2 - 2 1 of 4 www.diodes.com December 2008© Diodes Incorporated 2DD2652NEW PRODUCT LOW VCE(SAT) NPN SURFACE

Page 2 - NEW PRODUCT

2DD2652 Document number: DS31633 Rev. 2 - 2 2 of 4 www.diodes.com December 2008© Diodes Incorporated 2DD2652NEW PRODUCT 00.10.2255075 100 125150

Page 3 - © Diodes Incorporated

2DD2652 Document number: DS31633 Rev. 2 - 2 3 of 4 www.diodes.com December 2008© Diodes Incorporated 2DD2652NEW PRODUCT 0.1 1 10 100V , REVERSE

Page 4 - Suggested Pad Layout

2DD2652 Document number: DS31633 Rev. 2 - 2 4 of 4 www.diodes.com December 2008© Diodes Incorporated 2DD2652NEW PRODUCT Suggested Pad Layout

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