Diodes 2DB1424R Manuel d'utilisateur télécharger pdf

2DB1424R

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (2DD2150)

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.072 grams (approximate)

NEW PRODUCT

SOT89-3L

2,4

Schematic and Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-20 V

Collector-Emitter Voltage

CEO

-20 V

Emitter-Base Voltage

EBO

-6 V

Peak Pulse Current

-5 A

Continuous Collector Current

-3 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

= 25°C P

1 W

Thermal Resistance, Junction to Ambient Air (Note 3) @ T

= 25°C

125 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

(BR)CBO

-20

⎯ ⎯

= -50μA, I

= 0

Collector-Emitter Breakdown Voltage

(BR)CEO

-20

⎯ ⎯

= -1mA, I

= 0

Emitter-Base Breakdown Voltage

(BR)EBO

-6

⎯ ⎯

= -50μA, I

= 0

Collector Cut-Off Current

CBO

⎯ ⎯

-0.1

μA

= -20V, I

= 0

Emitter Cut-Off Current

EBO

⎯ ⎯

-0.1

μA

= -5V, I

= 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

CE(SAT)

⎯

-0.18 -0.5 V

= -2A, I

= -0.1A

DC Current Gain

180

⎯

390

⎯ V

= -2V, I

= -0.1A

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

obo

⎯

= -10V, I

= 0,

f = 1MHz

Current Gain-Bandwidth Product

⎯

220

⎯

MHz

= -2V, I

= 0.1A,

f = 100MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31329 Rev. 2 - 2

1 of 4

www.diodes.com

2DB1424R

Please click here to visit our online spice models database.

1 2 3 4

Résumé du contenu

Page 1 - 2DB1424R

2DB1424R PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD2150) • Ideally Suited

Page 2 - NEW PRODUCT

00.20.425 5075100 125150P, POWER DISSIPATION (W)DT , AMBIENT TEMPERATURE (°C)Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)A0.60.81.00

Page 3 - (Top View)

0.1 1 10 100CiboCobo I , EMITTER CURRENT (mA)EFig. 8 Typical Gain-Bandwidth Product vs. Emitter Current0501001502002500102030405060708090100V = -

Page 4 - Suggested Pad Layout

Suggested Pad Layout 3.00.92.70.41.71.31.9Unit: mm NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserv

Commentaires sur ces manuels

Pas de commentaire

Diodes 2DB1424R Manuel d'utilisateur

Naviguer en ligne ou télécharger Manuel d'utilisateur pour Matériel Diodes 2DB1424R. Diodes 2DB1424R User Manual Manuel d'utilisatio

Résumé du contenu

Commentaires sur ces manuels

Produits connexes et manuels pour Matériel Diodes 2DB1424R