Diodes ZXMN10A08G Manuel d'utilisateur télécharger pdf

Issue 1 - June 2006 1 www.zetex.com

ZXMN10A08G

100V SOT223 N-channel enhancement mode MOSFET

Summary

Description

This new generation trench MOSFET from Zetex features a unique

structure combining the benefits of low on-resistance and fast

switching, making it ideal for high efficiency power management

applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• SOT223 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

ZXMN

10A08

(BR)DSS

DS(on)

(⍀) I

(A)

100

0.250 @ V

= 10V 2.9

0.300 @ V

= 6V 2.6

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN10A08GTA 7 12 1,000

Pinout - top view

1 2 3 4 5 6 7 8

ZXMN10A08G 1

Résumé du contenu

Page 1 - ZXMN10A08G

Issue 1 - June 2006 1 www.zetex.com© Zetex Semiconductors plc 2006ZXMN10A08G100V SOT223 N-channel enhancement mode MOSFETSummaryDescriptionThis new ge

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ZXMN10A08GIssue 1 - June 2006 2 www.zetex.com© Zetex Semiconductors plc 2006Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25mm x 2

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ZXMN10A08GIssue 1 - June 2006 4 www.zetex.com© Zetex Semiconductors plc 2006Electrical characteristics (at Tamb = 25°C unless otherwise stated)Paramet

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ZXMN10A08GIssue 1 - June 2006 6 www.zetex.com© Zetex Semiconductors plc 2006Typical characteristicsCurrentregulatorChargeGate charge test circuitSwitc

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ZXMN10A08GIssue 1 - June 2006 8 www.zetex.com© Zetex Semiconductors plc 2006For international sales offices visit www.zetex.com/officesZetex products

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