Diodes ZXMP3A13F Manuel d'utilisateur

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SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.21 I
D
= -1.6A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
DEVICE MARKING
313
ZXMP3A13F
ISSUE 1 - MAY 2007
1
30V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A13FTA 7 8mm 3000 units
ZXMP3A13FTC 13 8mm 10000 units
ORDERING INFORMATION
S
O
T
2
3
Top View
PINOUT
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1 2 3 4 5 6 7 8

Résumé du contenu

Page 1 - ZXMP3A13F

SUMMARYV(BR)DSS= -30V; RDS(ON)= 0.21 ID= -1.6ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the

Page 2

ZXMP3A13FISSUE 1 - MAY 20072PARAMETER SYMBOL VALUE UNITJunction to ambient (a) RθJA200 °C/WJunction to ambient (b) RθJA155 °C/WNOTES(a) For a device s

Page 3

ZXMP3A13FISSUE 1 - MAY 20073100m 1 1010m100m110Single PulseTamb=25°CRDS(on)Limited100µs1ms10ms100ms1sDCSafe Operating Area-IDDrain Current (A)-VDSDrai

Page 4

ZXMP3A13FISSUE 1 - MAY 20074PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSSTATICDrain-Source Breakdown Voltage V(BR)DSS-30 V ID=-250␮A, VGS=0VZero Ga

Page 5

ZXMP3A13FISSUE 1 - MAY 200750.1 1 100.010.11100.1 1 100.010.1110123450.11-50 0 50 100 1500.60.81.01.21.41.60.1 1 100.11101000.2 0.4 0.6 0.8 1.0 1.2 1.

Page 6

ZXMP3A13FISSUE 1 - MAY 20076TYPICAL CHARACTERISTICS

Page 7

ZXMP3A13FISSUE 1 - MAY 20077DefinitionsProduct changeZetex Semiconductors reserves the right to alter, without notice, specifications, design, price o

Page 8

ZXMP3A13F8ISSUE 1 - MAY 2007EuropeZetex GmbHKustermann-ParkBalanstraße 59D-81541 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49euro

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