SUMMARYV(BR)DSS= -30V; RDS(ON)= 0.21 ID= -1.6ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the
ZXMP3A13FISSUE 1 - MAY 20072PARAMETER SYMBOL VALUE UNITJunction to ambient (a) RθJA200 °C/WJunction to ambient (b) RθJA155 °C/WNOTES(a) For a device s
ZXMP3A13FISSUE 1 - MAY 20073100m 1 1010m100m110Single PulseTamb=25°CRDS(on)Limited100µs1ms10ms100ms1sDCSafe Operating Area-IDDrain Current (A)-VDSDrai
ZXMP3A13FISSUE 1 - MAY 20074PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONSSTATICDrain-Source Breakdown Voltage V(BR)DSS-30 V ID=-250A, VGS=0VZero Ga
ZXMP3A13FISSUE 1 - MAY 200750.1 1 100.010.11100.1 1 100.010.1110123450.11-50 0 50 100 1500.60.81.01.21.41.60.1 1 100.11101000.2 0.4 0.6 0.8 1.0 1.2 1.
ZXMP3A13FISSUE 1 - MAY 20076TYPICAL CHARACTERISTICS
ZXMP3A13FISSUE 1 - MAY 20077DefinitionsProduct changeZetex Semiconductors reserves the right to alter, without notice, specifications, design, price o
ZXMP3A13F8ISSUE 1 - MAY 2007EuropeZetex GmbHKustermann-ParkBalanstraße 59D-81541 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49euro
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