20V P-CHANNEL ENHANCEMENT MODE MOSFETZXM62P02E6SUMMARYV(BR)DSS=-20V; RDS(ON)=0.20V; ID=-2.3ADESCRIPTIONThis new generation of high density MOSFETs fro
ZXM62P02E6THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to Ambient (a) RθJA113 °C/WJunction to Ambient (b) RθJA73 °C/WNOTES(a) For a device su
ZXM62P02E60.1 10 1000.0001 0.1 100080160-VDS - Drain-Source Voltage (V)Safe Operating Area0.110100-ID- Drain Current (A)DC1s100msD=0.1D=0.2Thermal Res
4ZXM62P02E6ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.STATICDrain-Source Bre
ZXM62P02E650.1 10012.5 50.1 10 100 0.2 0.8 1.420050-1000.1 10 100-VDS- Drain-Source Voltage (V)Output Characteristics0.1100-ID- Drain Current (A)VDS=-
TYPICAL CHARACTERISTICSBasic Gate Charge WaveformGate Charge Test CircuitSwitching Time WaveformsSwitching Time Test Circuit0.1 10 100 0 2.5 5-VDS - D
ZXM62P02E67 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General En
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