Diodes BYP58 Manuel d'utilisateur Page 2

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BYP57 / BYP58
Absolute maximum ratings (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Unit Test condition
BYP57-75 BYP58-75 75
BYP57-100 BYP58-100 100
BYP57-150 BYP58-150 150
BYP57-200 BYP58-200 200
BYP57-300 BYP58-300 300
BYP57-400 BYP58-400 400
BYP57-500 BYP58-500 500
BYP57-600 BYP58-600 600
BYP57-700 BYP58-700 700
Repetitive
peak
reverse
voltage
BYP57-800 BYP58-800
V
RRM
800
V T
c
= 140°C
Forward current, arithmetic value I
FAV
35 A
600
half-sine wave,
10 ms
Surge forward current I
FSM
500
A
T
J
= 175°C half-sine
wave, 10 ms
1800
half-sine wave,
10 ms
Maximum rated value
i²dt
1250
A²s
T
J
= 175°C half-sine
wave, 10 ms
Repetitive peak forward current
I
FRM
=π*I
FAV
110 A f = >15 Hz
Effective forward current I
FRMS
55 A
Junction temperature T
Jmax
175 °C
Storage temperature range T
stg
- 50 to + 140 °C
Issue 4 – September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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