Diodes BAS40TW /DW-04 /DW-05 /DW-06 /BRW Manuel d'utilisateur

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BAS40TW /DW-04
/DW-05 /DW-06 /BR
BAS40TW /DW-04
/DW-05 /DW-06 /BRW
Document number: DS30156 Rev. 13 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated
W
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 4 and 5)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
1
A
3
C
2
A
1
C
3
A
2
AC
1
AC
2
C
2
A
1
A
2
C
1
C
1
C
2
A
2
A
1
A
2
A
1
A
1
A
2
C
2
C
1
C
2
C
1
AC
1
AC
2
C
1
A
1
C
2
A
2
Top View BAS40TW BAS40DW-04 BAS40DW-05 BAS40DW-06 BAS40BRW
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
RMS Reverse Voltage
V
R(RMS)
28 V
Forward Continuous Current (Note 1)
I
FM
200 mA
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
I
FSM
600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
θ
JA
625
°C/W
Operating Temperature Range
T
J
-55 to +125
°C
Storage Temperature Range
T
STG
-65 to +125
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
40
V
I
R
= 10μA
Forward Voltage
V
F
380
1000
mV
mV
I
F
= 1.0mA, t
p
< 300μs
I
F
= 40mA, t
p
< 300μs
Reverse Current (Note 2)
I
R
200 nA
V
R
= 30V
Total Capacitance
C
T
5.0 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
5.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
Please click here to visit our online spice models database.
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Résumé du contenu

Page 1

BAS40TW /DW-04/DW-05 /DW-06 /BRBAS40TW /DW-04 /DW-05 /DW-06 /BRW Document number: DS30156 Rev. 13 - 2 1 of 4 www.diodes.com July 2008© Diodes Incor

Page 2 - /DW-05 /DW-06 /BR

BAS40TW /DW-04/DW-05 /DW-06 /BR W 0.11101001,00010,000010 20 30 40V , INSTANTANEOUS REVERSE VOLTAGE (V)Fig. 2 Typical Reverse CharacteristicsRI, I

Page 3 - © Diodes Incorporated

BAS40TW /DW-04/DW-05 /DW-06 /BR W Ordering Information (Note 6) Part Number Case Packaging BAS40TW-7-F SOT-363 3000/Tape & Reel BAS40DW-04-

Page 4

BAS40TW /DW-04 /DW-05 /DW-06 /BRW Document number: DS30156 Rev. 13 - 2 4 of 4 www.diodes.com July 2008© Diodes Incorporated BAS40TW /DW-04/DW-05 /

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