Diodes BAS70T /-04T /-05T /-06T Manuel d'utilisateur

Naviguer en ligne ou télécharger Manuel d'utilisateur pour Matériel Diodes BAS70T /-04T /-05T /-06T. Diodes BAS70T /-04T /-05T /-06T User Manual Manuel d'utilisatio

  • Télécharger
  • Ajouter à mon manuel
  • Imprimer
  • Page
    / 3
  • Table des matières
  • MARQUE LIVRES
  • Noté. / 5. Basé sur avis des utilisateurs
Vue de la page 0
BAS70T /-04T /-05T /-06T
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 2
Ordering Information, See Page 2
Weight: 0.002 grams (approximate)
Top View BAS70T BAS70-04T BAS70-05T BAS70-06T
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 V
RMS Reverse Voltage
V
R(RMS)
49 V
Forward Continuous Current (Note 1)
I
FM
70 mA
Non-Repetitive Peak Forward Surge Current @ t
p
< 1.0s I
FSM
100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
D
150 mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
θ
JA
833 °C/W
Operating Temperature Range
T
J
-55 to +125 °C
Storage Temperature Range
T
STG
-65 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
70
I
R
= 10μA
Forward Voltage
V
F
410
1000
mV
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
Leakage Current (Note 2)
I
R
100 nA
t
p
< 300µs, V
R
= 50V
Total Capacitance
C
T
2.0 pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
5.0 ns
I
F
= I
R
= 10mA to IR = 1.0mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAS70T /-04T /-05T /-06T
Document number: DS30261 Rev. 11 - 2
1 of 3
www.diodes.com
July 2008
© Diodes Incorporated
Please click here to visit our online spice models database.
Vue de la page 0
1 2 3

Résumé du contenu

Page 1

BAS70T /-04T /-05T /-06T SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Trans

Page 2 - Marking Information

BAS70T /-04T /-05T /-06T 0.11101001,00010,00002010 30 60504070V , INSTANTANEOUS REVERSE VOLTAGE (V)Fig. 2 Typical Reverse CharacteristicsRI , INST

Page 3 - © Diodes Incorporated

BAS70T /-04T /-05T /-06T Document number: DS30261 Rev. 11 - 2 3 of 3 www.diodes.com July 2008© Diodes Incorporated BAS70T /-04T /-05T /-06T Packa

Commentaires sur ces manuels

Pas de commentaire