Diodes BAS70JW Manuel d'utilisateur

Naviguer en ligne ou télécharger Manuel d'utilisateur pour Matériel Diodes BAS70JW. Diodes BAS70JW User Manual Manuel d'utilisatio

  • Télécharger
  • Ajouter à mon manuel
  • Imprimer
  • Page
    / 3
  • Table des matières
  • MARQUE LIVRES
  • Noté. / 5. Basé sur avis des utilisateurs
Vue de la page 0
BAS70JW
Document number: DS30188 Rev. 13 - 2
1 of 3
www.diodes.com
June 2008
© Diodes Incorporated
BAS70J
W
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please see Ordering Information, Note 7, on Page 2
Orientation: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
C
1
A
2
A
1
C
2
Top View
Device Schematic
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 V
RMS Reverse Voltage
V
R(RMS)
49 V
Forward Continuous Current (Note 1)
I
FM
70 mA
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
I
FSM
100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
θ
JA
625
°C/W
Operating Temperature Range
T
J
-55 to +125
°C
Storage Temperature Range
T
STG
-65 to +125
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
70
V
I
R
= 10μA
Forward Voltage
V
F
410
1000
mV
mV
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
Reverse Current (Note 2)
I
R
100 nA
t
p
< 300µs, V
R
= 50V
Total Capacitance
C
T
2.0 pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
5.0 ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Please click here to visit our online spice models database.
Vue de la page 0
1 2 3

Résumé du contenu

Page 1 - BAS70JW

BAS70JW Document number: DS30188 Rev. 13 - 2 1 of 3 www.diodes.com June 2008© Diodes Incorporated BAS70JW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARR

Page 2 - © Diodes Incorporated

BAS70JW 0.11101001,00010,000020103060504070V , INSTANTANEOUS REVERSE VOLTAGE (V)Fig. 2 Typical Reverse CharacteristicsRI, INSTANTANEOUS REVERSE CU

Page 3

BAS70JW Document number: DS30188 Rev. 13 - 2 3 of 3 www.diodes.com June 2008© Diodes Incorporated BAS70JW Package Outline Dimensions

Commentaires sur ces manuels

Pas de commentaire