Diodes BAS40/ -04/ -05/ -06 Manuel d'utilisateur télécharger pdf (Page 2)

BAS40/ -04/ -05/ -06

Document number: DS11006 Rev. 25 - 2

2 of 5

www.diodes.com

December 2013

BAS40/ -04/ -05/ -06

Marking Information

Date Code Key

Year 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code K L M N P R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

40 V

Forward Continuous Current (Note 6)

200 mA

Forward Surge Current (Note 6) @ t < 1.0s

FSM

600 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 6)

350 mW

Thermal Resistance, Junction to Ambient Air (Note 6)



357 °C/W

Operating Temperature Range

-55 to +125 °C

Storage Temperature Range

STG

-65 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 7)

(BR)R

 

= 10µA

Forward Voltage

 

380

1000

< 300µs, I

= 1.0mA 

< 300µs, I

= 40mA

Reverse Leakage Current (Note 7)



20 200 nA

< 300µs, V

= 30V

Total Capacitance



4.0 5.0 pF

= 0V, f =1.0MHz

Reverse Recovery Time

 

5.0 ns

= I

= 10mA to I

= 1.0mA,

= 100Ω

Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

7. Short duration pulse test used to minimize self-heating effect.

xxx = Product Type Marking Code

K43 = BAS40

K44 = BAS40-04

K45 = BAS40-05

K46 = BAS40-06

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y

= Year (ex: A = 2013)

M = Month (ex: 9 = September)

Chengdu A/T Site Shanghai A/T Site

1 2 3 4 5

BAS40/ -04/ -05/ -06 1

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