2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
5 of 7
www.diodes.com
February 2013
© Diodes Incorporated
2DB1188P/Q/
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001 0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 5. Typical Base-Emitter Saturation Voltage
vs. Collector Current
-V , BASE EMI
E
SA
A
I
N V
L
A
E(V)
BE(SAT)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Figure 6. Typical Output Capacitance Characteristics
,
A
A
I
AN
E (pF)
obo
0
10
20
30
40
50
60
f = 1MHz
0
20
40
60
80
100
120
140
0 102030405060708090100
I , Emitter Current (mA)
E
Figure 7. Typical Gain-Bandwidth Product vs. Emitter Current
f,
AI
-BA
DWID
D
(M
z)
T
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