Diodes 2DD1766P/Q/R Manuel d'utilisateur

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2DD1766P/Q/R
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (2DB1188)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
NEW PRODUCT
SOT89-3L
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
B
A
S
E
4
3
2
1
C
C
B
E
T
O
P
V
I
E
W
Schematic and Pin Configuration
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
32 V
Emitter-Base Voltage
V
EBO
5 V
Peak Pulse Current
I
CM
2.5 A
Continuous Collector Current
I
C
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
R
θ
JA
125 °C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
40
V
I
C
= 50μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
32
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
= 50μA, I
C
= 0
Collector Cut-Off Current
I
CBO
1
μA
V
CB
= 20V, I
E
= 0
Emitter Cut-Off Current
I
EBO
1
μA
V
EB
= 4V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3 0.8 V
I
C
= 2A, I
B
= 0.2A
82
180
120
270
DC Current Gain
2DD1766P
2DD1766Q
2DD1766R
h
FE
180
390
V
CE
= 3V, I
C
= 0.5A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
220
MHz
V
CE
= 5V, I
E
= -50mA,
f = 100MHz
Output Capacitance
C
ob
13
pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31167 Rev. 4 - 2
1 of 4
www.diodes.com
2DD1766P/Q/R
© Diodes Incorporated
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Résumé du contenu

Page 1 - 2DD1766P/Q/R

2DD1766P/Q/R NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (2DB1188) • Ideally Su

Page 2 - NEW PRODUCT

00.20.425 5075100 125150P, POWER DISSIPATION (W)DT , AMBIENT TEMPERATURE (°C)Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)A0.60.81.00

Page 3 - (Top View)

NEW PRODUCT Ordering Information (Note 5) Device Packaging Shipping 2DD1766P-13 SOT89-3L 2500/Tape & Reel 2DD1766Q-13 SOT89-3L 25

Page 4 - Suggested Pad Layout

Suggested Pad Layout 3.00.92.70.41.71.31.9Unit: mm NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right

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