Diodes BC847BVC Manuel d'utilisateur télécharger pdf

BC847BVC

Document number: DS30638 Rev. 5 - 2

1 of 4

www.diodes.com

April 2009

BC847BVC

NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Die Construction

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 3)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 2

• Ordering Information: See Page 2

• Weight: 0.002 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

50 V

Collector-Emitter Voltage

CEO

45 V

Emitter-Base Voltage

EBO

6.0 V

Collector Current

100 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 2)

150 mW

Thermal Resistance, Junction to Ambient (Note 2)

833

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage (Note 5)

(

)

CBO

50 — — V

= 10μA, I

= 0

Collector-Emitter Breakdown Voltage (Note 5)

(

)

CEO

45 — — V

= 10mA, I

= 0

Emitter-Base Breakdown Voltage (Note 5)

(

)

EBO

6 — — V

= 1μA, I

= 0

DC Current Gain (Note 5)

200 290 450 —

= 5.0V, I

= 2.0mA

Collector-Emitter Saturation Voltage (Note 5)

CE(SAT)

— —

100

300

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Saturation Voltage (Note 5)

BE(SAT)

—

700

900

— mV

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Voltage (Note 5)

580

—

660

—

700

770

= 5.0V, I

= 2.0mA

= 5.0V, I

= 10mA

Collector-Emitter Cutoff Current (Note 5)

CBO

— —

5.0

µA

= 30V

= 30V, T

= 150°C

Gain Bandwidth Product

100 — — MHz

= 5.0V, I

= 10mA,

f = 100MHz

Output Capacitance

OBO

— — 4.5 pF

= 10V, f = 1.0MHz

Noise Figure NF — — 10 dB

= 5V, R

= 2.0kΩ,

f = 1.0kHz, BW = 200Hz

Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php

5. Short duration pulse test used to minimize self-heating effect.

Top View

Bottom View

Device Schematic

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Résumé du contenu

Page 1 - BC847BVC

BC847BVC Document number: DS30638 Rev. 5 - 2 1 of 4 www.diodes.com April 2009© Diodes Incorporated BC847BVC NPN DUAL SMALL SIGNAL SURFACE MOUNT TR

Page 2

BC847BVC Document number: DS30638 Rev. 5 - 2 2 of 4 www.diodes.com April 2009© Diodes Incorporated BC847BVC -50050100150250200150501000T , AMBIE

Page 3 - Suggested Pad Layout

BC847BVC Document number: DS30638 Rev. 5 - 2 3 of 4 www.diodes.com April 2009© Diodes Incorporated BC847BVC Package Outline Dimensions

Page 4

BC847BVC Document number: DS30638 Rev. 5 - 2 4 of 4 www.diodes.com April 2009© Diodes Incorporated BC847BVC IMPORTANT NOTICE DIODES INCORPORA

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