2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
4 of 7
www.diodes.com
February 2013
© Diodes Incorporated
2DB1188P/Q/
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BV
CBO
-40
V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-32
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
V
I
E
= -100µA, I
C
= 0
Collector Cutoff Current
I
CBO
-100 nA
V
CB
= -20V, I
E
= 0
Emitter Cutoff Current
I
EBO
-100 nA
V
EB
= - 5V, I
C
= 0
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
V
CE
sat
-0.35 -0.8 V
I
C
= -2A, I
B
= -0.2A
DC Current Gain
2DB1188P
h
FE
82
180
V
CE
= -3V, I
C
= -0.5A
2DB1188Q 120 270
2DB1188R 180 390
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
120
MHz
V
CE
= -5V, I
C
= -0.1A,
f = 30MHz
Output Capacitance
C
obo
20
pF
V
CB
= -10V, f = 1MHz
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
012 3 45
-V , COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 1. Typical Collector Current
vs. Collector-Emitter Voltage
-I ,
LLE
E
(A)
C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 2. Typical DC Current Gain
vs. Collector Current (2DB1188Q)
h, D
EN
AIN
FE
0
50
100
150
200
250
300
350
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -3V
CE
0.0001 0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V ,
LLE
EMI
E
SATURATION VOLTAGE (V)
CE(SAT)
0
0.1
0.2
0.3
0.4
0.5
0.6
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001 0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 4. Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-V , BASE EMI
E
N-
N V
L
A
E (V)
BE(ON)
T = 85°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A
V = -3V
CE
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