Diodes 2DB1184Q Manuel d'utilisateur télécharger pdf (Page 2)

2DB1184Q

Document number: DS31504 Rev. 5 - 2

2 of 6

www.diodes.com

May 2014

2DB1184Q

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-60 V

Collector-Emitter Voltage

CEO

-50 V

Emitter-Base Voltage

EBO

-5 V

Continuous Collector Current

-3 A

Peak Pulse Collector Current

-4.5 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

1.2 W

Power Dissipation @T

= +25°C

(Note 6)

15 W

Thermal Resistance, Junction to Lead (Note 5)

θJA

104 °C/W

Thermal Resistance, Junction to Ambient (Note 6)

θJL

8.3 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

ESD Ratings (Note 7)

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM 4000 V 3A

Electrostatic Discharge - Machine Model ESD MM 400 V C

Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided

1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristics

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000

t , PULSE DURATION TIME (s)

Figure 1 Transient Thermal Response

0.001

0.01

0.1

r(t),

ANSIEN

MAL

ESIS

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) *

R = 110°C/W

P(pk)

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

1 2 3 4 5 6

2DB1184Q 1

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