Diodes D5V0L4B5TS Manuel d'utilisateur télécharger pdf (Page 2)

D5V0L4B5TS

Document number: DS35428 Rev. 6 - 2

2 of 5

www.diodes.com

January 2012

0L4B5TS

ADVANCE INFORMATION

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

84 W

8/20μs, Per Fig. 2

Peak Pulse Current

6 A

8/20μs, Per Fig. 2

ESD Protection – Contact Discharge

ESD_Contac

±30 kV Standard IEC 61000-4-2

ESD Protection – Air Discharge

ESD_Ai

±30 kV Standard IEC 61000-4-2

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)

300 mW

Thermal Resistance, Junction to Ambient (Note 5)

417

°C/W

Operating Junction Temperature Range

-65 to +150

°C

Storage Temperature Range

STG

-65 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Working Voltage

RWM

- 5.0 V -

Breakdown Voltage

6 7 8 V

= 1.0mA

Reverse Leakage Current (Note 6)

- 10 100 nA

RWM

= 5V

Clamping Voltage (Note 4) VCL

7.0 9.0 V

= 1A, t

= 8/20μs

8.7 10.7 V

= 3A, t

= 8/20μs

10.5 12.0 V

= 5A, t

= 8/20μs

11.5 14.0 V

= 6A, t

= 8/20μs

Differential Resistance

DIF

- 0.2 - Ω

= 1.0A, t

= 8/20μs

Channel Input Capacitance

- 15 20 pF

= 0V, f = 1MHz

(Channel to Pin 2)

Notes: 4. Measured from channel to pin 2; Non-repetitive current pulse per Fig. 2.

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0 25 50 75 100 125 150 175 200

100

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Pulse Derating Curve

EAK

LSE DE

IN %

PEAK POWER OR CURRENT

t, TIME ( s)

Fig. 2 Pulse Waveform

20 40

100

I , PEAK PULSE CURRENT (%I )

PppP

1 2 3 4 5

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Diodes D5V0L4B5TS Manuel d'utilisateur Page 2

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