Diodes CTA2P1N Manuel d'utilisateur télécharger pdf

DS30296 Rev. 9 - 2

1 of 5

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CTA2P1N

CTA2P1NCTA2P1N

COMPLEX TRANSISTOR ARRAY

Features

• Combines MMBT4403 type transistor with 2N7002 type

MOSFET

• Small Surface Mount Package

• NPN/P-Channel Complement Available: CTA2N1P

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Marking Information: A80, See Page 5

• Ordering Information: See Page 5

• Weight: 0.006 grams (approximate)

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.30 0.40

H 1.80 2.20

⎯

0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.25

0° 8°

All Dimens ons in mm i

B C

NEW P PRODODUCT T R UC

Maximum Ratings, Total Device @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 2)

150 mW

Thermal Resistance, Junction to Ambient (Note 2)

833

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Maximum Ratings, Q1, MMBT4403 PNP Transistor Element @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-40 V

Collector-Emitter Voltage

CEO

-40 V

Emitter-Base Voltage

EBO

-5.0 V

Collector Current - Continuous

-600 mA

Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

60 V

Drain-Gate Voltage R

≤ 1.0MΩ V

DGR

60 V

Gate-Source Voltage Continuous

Pulsed

GSS

±20

±40

Drain Current (Note 2) Continuous

Continuous @ 100°C

Pulsed

115

800

Notes: 1. No purposefully added lead.

2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

1 2 3 4 5

Résumé du contenu

Page 1 - CTA2P1NCTA2P1N

DS30296 Rev. 9 - 2 1 of 5 www.diodes.com CTA2P1N © Diodes Incorporated CTA2P1NCTA2P1N COMPLEX TRANSISTOR ARRAY Features • Combines MMBT4403 typ

Page 2

DS30296 Rev. 9 - 2 2 of 5 www.diodes.com CTA2P1N © Diodes Incorporated NEW PRODUCT Electrical Characteristics, Q1, MMBT4403 PNP Transistor Elem

DS30296 Rev. 9 - 2 3 of 5 www.diodes.com CTA2P1N © Diodes Incorporated MMBT4403 Section 15201030-0.1-10-1.0-30CAPACITANCE (pF)REVERSE VOLTAGE (

Page 4 - V = 10V

DS30296 Rev. 9 - 2 4 of 5 www.diodes.com CTA2P1N © Diodes Incorporated MMBT4403 Section (Continued) 05010025 5075100 125150175200P, POWER DISSIP

Page 5

DS30296 Rev. 9 - 2 5 of 5 www.diodes.com CTA2P1N © Diodes Incorporated 2N7002 Section (Continued) 021430 0.2 0.4 0.6 0.81V GATE SOURCE VOLTAGE (

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