Diodes CTA2N1P Manuel d'utilisateur

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DS30295 Rev. 7 - 2 1 of 6
www.diodes.com
CTA2N1P
© Diodes Incorporated
CTA2N1P
COMPLEX TRANSISTOR ARRAY
Features
Combines MMBT4401 type transistor with BSS84 type
MOSFET
Small Surface Mount Package
PNP/N-Channel Complement Available: CTA2P1N
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: A03, See Page 6
Ordering Information: See Page 6
Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
0°
All Dimensions in mm
NEW PRODUCT
Maximum Ratings, Total Device @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
d
150 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Maximum Ratings, Q1, MMBT4401 NPN Transistor Element @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current - Continuous
I
C
600 mA
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-50 V
Drain-Gate Voltage R
GS
1.0MΩ V
DGR
-50 V
Gate-Source Voltage Continuous
V
GSS
±20 V
Drain Current Continuous
I
D
-130 mA
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
B
Q1
S
Q2
D
Q2
E
Q1
C
Q1
G
Q2
A
B
C
J
D
H
K
F
M
L
A03
Q2
Q1
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Résumé du contenu

Page 1 - CTA2N1P

DS30295 Rev. 7 - 2 1 of 6 www.diodes.com CTA2N1P © Diodes Incorporated CTA2N1P COMPLEX TRANSISTOR ARRAY Features • Combines MMBT4401 type tr

Page 2

DS30295 Rev. 7 - 2 2 of 6 www.diodes.com CTA2N1P © Diodes Incorporated NEW PRODUCT Electrical Characteristics, Q1, MMBT4401 NPN Transistor Ele

Page 3 - NEW PRODUCT

DS30295 Rev. 7 - 2 3 of 6 www.diodes.com CTA2N1P © Diodes Incorporated MMBT4401 Section 05010025 5075 100 125150175200P, POWER DISSIPATION (mW)D

Page 4

DS30295 Rev. 7 - 2 4 of 6 www.diodes.com CTA2N1P © Diodes Incorporated MMBT4401 Section 10.1 10 100V , BASE EMITTER VOLTAGE (V)BE(ON)I , COLLECT

Page 5 - BSS84 Section

DS30295 Rev. 7 - 2 5 of 6 www.diodes.com CTA2N1P © Diodes Incorporated BSS84 Section 0600500400300200100021543I, DRAIN-TO-SOURCE CURRENT (mA)DV

Page 6 - © Diodes Incorporated

DS30295 Rev. 7 - 2 6 of 6 www.diodes.com CTA2N1P © Diodes Incorporated Ordering Information (Note 6) NEW PRODUCT Device Packaging Shippi

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