Diodes D5V0L1B2WS Manuel d'utilisateur télécharger pdf (Page 2)

D5V0L1B2WS

Document number: DS35429 Rev. 4 - 2

2 of 4

www.diodes.com

January 2012

0L1B2WS

ADVANCE INFORMATION

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

84 W

8/20μs, Per Fig. 1

Peak Pulse Current

6 A

8/20μs, Per Fig. 1

ESD Protection – Contact Discharge

ESD_Contac

±30 kV Standard IEC 61000-4-2

ESD Protection – Air Discharge

ESD_Ai

±30 kV Standard IEC 61000-4-2

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 4)

200 mW

Thermal Resistance, Junction to Ambient (Note 4)

625

°C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Standoff Voltage

RWM

- - 5 V -

Channel Leakage Current (Note 5)

- 10 100 nA

RWM

= 5V

Clamping Voltage, Positive Transients

7.0

8.7

10.5

11.5

9.0

10.7

12.0

14.0

= 1A, t

= 8/20μS

= 3A, t

= 8/20μS

= 5A, t

= 8/20μS

= 6A, t

= 8/20μS

Breakdown Voltage

6 7 8 V

= 1mA

Differential Resistance

DIF

0.2 -

Ω

= 1A, tp = 8/20μS

Channel Input Capacitance

- 15 20 pF

= 0V, f = 1MHz

Notes: 4. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

t, TIME ( s)

Fig. 1 Pulse Waveform

20 40

100

I , PEAK PULSE CURRENT (%I )

PppP

01 23 456

V , REVERSE VOLTAGE (V)

Fig. 2 Typical Total Capacitance vs. Reverse Voltage

E (pF)

f = 1MHz

1 2 3 4

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