BSN20
Document number: DS31898 Rev. 8 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
BSN20
NEW PRODUCT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Drain-Source Current vs. Drain-Source Voltage
DS
I, D
AIN-S
E
EN
(A)
D
V = 3.0V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 10V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE (V)
Fig. 6 Transfer Characteristics
GS
I, D
AIN-S
E
EN
(A)
D
150 C
°
25 C
°
V = 5V
DS
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
I , DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
D
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
V = 4.5V
GS
V = V
GS
10
V = .5V
GS
3
V = 4.V
GS
0
0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
Fig. 8 Drain-Source On-Resistance vs. Junction Temperature
J
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
V = 4.5V
GS
V = 10V
GS
I = A
D
200m
I = 500 A
D
m
0
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
Fig. 9 Gate Threshold Voltage vs. Junction Temperature
J
V,
A
E
ES
L
V
L
A
E (V)
GS(TH)
I = 1.0mA
D
I = A
D
250µ
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE (V)
Fig. 10 Transfer Characteristics
GS
0
0.1
0.2
0.3
0.4
0.5
I, D
AIN-S
E
EN
(A)
D
-55 C
°
150 C
°
25 C
°
125 C
°
85 C
°
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