Diodes BSP75N Manuel d'utilisateur télécharger pdf

Issue 4 - September 2006 1 www.zetex.com

BSP75N

60V self-protected low-side Intellifet

MOSFET switch

Summary

Continuous drain source voltage V

=60V

On-state resistance 500m⍀

Maximum nominal load current

(a)

1.1A (V

= 5V)

Minimum nominal load current

(c)

0.7A (V

= 5V)

Clamping energy 550mJ

Ordering information

Device marking

BSP75N

Description

Self-protected low side MOSFET. Monolithic over temperature, over

current, over voltage (active clamp) and ESD protected logic level

functionality. Intended as a general purpose switch.

Features

• Short circuit protection with auto restart

• Over-voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current protection

• Input protection (ESD)

• High continuous current rating

• Load dump protection (actively protects load)

• Logic level input

Note:

The tab is connected to the source pin and must

be electrically isolated from the drain pin.

Connection of significant copper to the drain pin

is recommended for best thermal performance.

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

BSP75NTA 7 12mm embossed 1000

SOT223

1 2 3 4 5 6 7 8

Résumé du contenu

Page 1 - MOSFET switch

Issue 4 - September 2006 1 www.zetex.com© Zetex Semiconductors plc 2006BSP75N60V self-protected low-side IntellifetTM MOSFET switchSummaryContinuous d

Page 2 - Applications

BSP75NIssue 4 - September 2006 2 www.zetex.com© Zetex Semiconductors plc 2006Functional block diagramApplications• Especially suited for loads with a

Page 3 - Thermal resistance

BSP75NIssue 4 - September 2006 3 www.zetex.com© Zetex Semiconductors plc 2006Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25mm x

Page 4

BSP75NIssue 4 - September 2006 4 www.zetex.com© Zetex Semiconductors plc 2006Electrical characteristics (at TAMB = 25°C unless otherwise stated)Parame

Page 5 - Application information

BSP75NIssue 4 - September 2006 5 www.zetex.com© Zetex Semiconductors plc 2006Application informationThe current-limit protection circuitry is designed

Page 6

BSP75NIssue 4 - September 2006 6 www.zetex.com© Zetex Semiconductors plc 2006Large copper area characteristicsFor large copper area as described in no

Page 7 - Typical characteristics

Page 8 - Package outline - SOT223

BSP75NIssue 4 - September 2006 8 www.zetex.com© Zetex Semiconductors plc 2006For international sales offices visit www.zetex.com/officesZetex products

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