Diodes BSS123W Manuel d'utilisateur

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BSS123W
Document number: DS30368 Rev. 11 - 2
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated
BSS123W
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
100V
6.0 @ V
GS
= 10V
170mA
Description
This MOSFET has been designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
Features
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound, UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Notes 4 & 5)
Part Number Compliance Case Packaging
BSS123W-7-F Standard SOT323 3000/Tape & Reel
BSS123WQ-7-F Automotive SOT323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
Date Code Key
Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code N P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT323
Top View
Equivalent Circuit
Top View
G
S
D
K23
YM
Chengdu A/T Site
Shanghai A/T Site
K23 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Source
Gate
Drain
e3
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BSS123W Document number: DS30368 Rev. 11 - 2 1 of 5 www.diodes.com October 2013© Diodes Incorporated BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Pr

Page 2

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