Diodes ZVN0124A Manuel d'utilisateur télécharger pdf

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 1 – MARCH 94

FEATURES

* 240 Volt V

DS(on)

=16Ω

APPLICATIONS

* Telephone handsets

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

240 V

Continuous Drain Current at T

amb

=25°C I

160 mA

Pulsed Drain Current I

Gate Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

700 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

DSS

240 V I

=1mA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

1 3 V ID=1mA, V

= V

Gate-Body Leakage I

GSS

20 nA

=± 20V, V

=0V

Zero Gate Voltage Drain

Current

DSS

100

µA

=240 V, V

=192 V, V

=0V,

T=125°C

(2)

On-State Drain Current(1) I

D(on)

500 mA V

=25 V, V

=10V

Static Drain-Source On-State

Resistance (1)

DS(on)

Ω

=10V,I

=250mA

Forward Transconductance

(1)(2)

100 mS V

=25V,I

=250mA

Input Capacitance (2) C

iss

85 pF

Common Source Output

Capacitance (2)

oss

20 pF V

=25 V, V

=0V, f=1MHz

Reverse Transfer

Capacitance (2)

rss

7pF

Turn-On Delay Time (2)(3) t

d(on)

7ns

≈25V, I

=250mA

Rise Time (2)(3) t

8ns

Turn-Off Delay Time (2)(3) t

d(off)

16 ns

Fall Time (2)(3) t

8ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(

E-Line

TO92 Compatible

3-350

TYPICAL CHARACTERISTICS

Output Characteristics

VDS-Drain Source Voltage (Volts)

D(O

)

Sta

ps)

1.4

1.2

1.0

0.6

0.2

0.4

0.8

1.6

1.8

Transfer Characteristics

Normalised R

DS(on)

and V

GS(th)

V Temperature

Temperature (°C)

mal

ise

DS(on)

and V

S(t

0 -60 -40 -20 0 20 40 60 80

100

120 140 160

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.4

0.8

-S

ourc

on)

ate

res

tage

(

)

ID=0.25A

0246810

1.0

0.8

0.6

0.4

0.2

020406080100

s pulse

2.0

Saturation Characteristics

VDS-Drain Source Voltage (Volts)

On-resistance vs gate-source voltage

VGS-Gate Source Voltage (Volts)

0246810

DS-

Drain Source

(Volts)

DS(ON)

-Drain Source Resistance

(

Ω

)

Voltage Saturation Characteristics

VGS-Gate Source Voltage (Volts)

1.4

1.2

1.0

0.6

0.2

0.4

0.8

1.6

1.8

02 4 6 8 10

2.0

VGS=10V

ID=

500mA

100mA

VDS=25V

VDS=10V

)

Sta

t (

Amps

)

On-

te Dr

ain

(

Amps)

VGS-Gate Source Voltage (Volts)

VGS=10V

ID=1mA

VGS=VDS

110

100

ID=

500mA

I00mA

ZVN0124A

3-351

1 2 3

ZVN0124A 1

Résumé du contenu

Page 1 - ZVN0124A

N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 1 – MARCH 94FEATURES* 240 Volt VDS*RDS(on)=16ΩAPPLICATIONS* Telephone handsetsABSOLUTE MAXIMUM RATING

Page 2

N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 1 – MARCH 94FEATURES* 240 Volt VDS*RDS(on)=16ΩAPPLICATIONS* Telephone handsetsABSOLUTE MAXIMUM RATING

Page 3

TYPICAL CHARACTERISTICS Transconductance v drain current ID(On)-Drain Current (Amps) 0 0.2 0.4 0.6 0.8 1.0500400300100 025V VDS= gfs-Forward transc

Commentaires sur ces manuels

Pas de commentaire

Diodes ZVN0124A Manuel d'utilisateur

Naviguer en ligne ou télécharger Manuel d'utilisateur pour Matériel Diodes ZVN0124A. Diodes ZVN0124A User Manual Manuel d'utilisatio

Résumé du contenu

Commentaires sur ces manuels

Produits connexes et manuels pour Matériel Diodes ZVN0124A