Diodes ZXMN7A11K Manuel d'utilisateur télécharger pdf

Issue 2 - August 2006 1 www.zetex.com

ZXMN7A11K

70V N-channel enhancement mode MOSFET

Summary

(BR)DSS

=70V : R

DS(on)

=0.13⍀

=6.1A

Description

This new generation of trench MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast

switching speed. This makes them ideal for high efficiency, low voltage

power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• DPAK package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

• Class D audio output stages

Ordering information

Device marking

ZXMN

7A11

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMN7A11KTC 13 16 2,500

Pinout - top view

1 2 3 4 5 6 7 8

ZXMN7A11K 1

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Issue 2 - August 2006 1 www.zetex.com© Zetex Semiconductors plc 2006ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13⍀

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ZXMN7A11KIssue 2 - August 2006 2 www.zetex.com© Zetex Semiconductors plc 2006Absolute maximum ratings NOTES:(a) For a device surface mounted on 50mm x

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ZXMN7A11KIssue 2 - August 2006 4 www.zetex.com© Zetex Semiconductors plc 2006Electrical characteristics (at Tamb = 25°C unless otherwise stated)Parame

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ZXMN7A11KIssue 2 - August 2006 8 www.zetex.com© Zetex Semiconductors plc 2006For international sales offices visit www.zetex.com/officesZetex products

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Diodes ZXMN7A11K Manuel d'utilisateur

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