Diodes MJD350 Manuel d'utilisateur télécharger pdf

MJD350

Document number: DS31608 Rev. 2 - 2

1 of 4

www.diodes.com

November 2008

MJD350

NEW PRODUCT

HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• High Collector-EmitterVoltage

• Ideally Suited for Automated Assembly Processes

• Ideal for Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: DPAK

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.34 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

-300 V

Collector-Emitter Voltage

CEO

-300 V

Emitter-Base Voltage

EBO

-3 V

Continuous Collector Current

-0.5 A

Peak Pulse Collector Current

-0.75 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @T

= 25°C P

15 W

Thermal Resistance, Junction to Case

8.33 °C/W

Power Dissipation @T

= 25°C (Note 3) P

1.56 W

Thermal Resistance, Junction to Ambient

81 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 4)

(

SUS

)

CEO

-300

⎯ ⎯

= -1mA, I

= 0

Collector Cutoff Current

CBO

⎯ ⎯

-100

μA

= -300V, I

= 0

Emitter Cutoff Current

EBO

⎯ ⎯

-100

μA

= - 3V, I

= 0

ON CHARACTERISTICS (Note 4)

DC Current Gain

⎯

240

⎯

= -10V, I

= -50mA

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with the minimum pad size recommended.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

Top View

Device Schematic

Pin Out Configuration

COLLECTOR

BASE

EMITTER

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NEW PRODUCT 2

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Page 1

MJD350 Document number: DS31608 Rev. 2 - 2 1 of 4 www.diodes.com November 2008© Diodes Incorporated MJD350NEW PRODUCT HIGH VOLTAGE PNP SURFACE MO

Page 2 - NEW PRODUCT

MJD350 Document number: DS31608 Rev. 2 - 2 2 of 4 www.diodes.com November 2008© Diodes Incorporated MJD350NEW PRODUCT 00P , POWER DISSIPATION (W

Page 3

MJD350 Document number: DS31608 Rev. 2 - 2 3 of 4 www.diodes.com November 2008© Diodes Incorporated MJD350NEW PRODUCT 0.1 1 10 100V , REVERSE VO

MJD350 Document number: DS31608 Rev. 2 - 2 4 of 4 www.diodes.com November 2008© Diodes Incorporated MJD350NEW PRODUCT Package Outline Dimensions

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