MMBTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (MMBTA42)
• Ideal for Medium Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
E
B
C
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-300 V
Collector-Emitter Voltage V
CEO
-300 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current (Note 1) (Note 3) I
C
-500 mA
Power Dissipation (Note 1) P
d
300 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage and Temperature Range T
j
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V
(BR)CBO
-300
⎯
V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-300
⎯
V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5.0
⎯
V
I
E
= -100μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯
-250 nA V
CB
= -200V, I
E
= 0
Collector Cutoff Current I
EBO
⎯
-100 nA V
CE
= -3.0V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain h
FE
25
40
25
⎯ ⎯
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.5 V I
C
= -20mA, I
B
= -2.0mA
Base- Emitter Saturation Voltage V
BE(SAT)
⎯
-0.9 V I
C
= -20mA, I
B
= -2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
cb
⎯
6.0 pF
V
CB
= -20V, f = 1.0MHz,
I
E
= 0
Current Gain-Bandwidth Product f
T
50
⎯
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (R
θJA
), power dissipation rating (P
d
) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30060 Rev. 11 - 2 1 of 3
www.diodes.com
MMBTA92
© Diodes Incorporated
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