Diodes DMN1150UFB Manuel d'utilisateur

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DMN1150UFB
Document number: DS36101 Rev. 3 - 2
1 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMN1150UFB
ADVANCE INFORMATION
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
12V
0.15Ω @ V
GS
= 4.5V
1.41A
0.185Ω @ V
GS
= 2.5V
1.25A
0.21Ω @ V
GS
= 1.8V
1.16A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Features
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
, 1.0V max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN1150UFB-7B X1-DFN1006-3 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X1-DFN1006-3
Top View
Internal Schematic
Bottom View
E5 = Product Type Marking Code
Bar Denotes Gate and Source Side
Top View
D
S
G
ESD PROTECTED
Equivalent Circuit
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
E5
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Résumé du contenu

Page 1 - DMN1150UFB

DMN1150UFB Document number: DS36101 Rev. 3 - 2 1 of 6 www.diodes.com February 2013© Diodes Incorporated DMN1150UFBADVANCE INFORMATION NEW PRODUCT

Page 2

DMN1150UFB Document number: DS36101 Rev. 3 - 2 2 of 6 www.diodes.com February 2013© Diodes Incorporated DMN1150UFBADVANCE INFORMATION NEW PRODUCT

Page 3 - NEW PRODUCT

DMN1150UFB Document number: DS36101 Rev. 3 - 2 3 of 6 www.diodes.com February 2013© Diodes Incorporated DMN1150UFBADVANCE INFORMATION NEW PRODUCT

Page 4

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Page 5 - © Diodes Incorporated

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Page 6

DMN1150UFB Document number: DS36101 Rev. 3 - 2 6 of 6 www.diodes.com February 2013© Diodes Incorporated DMN1150UFBADVANCE INFORMATION NEW PRODUCT

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