Diodes DMN2009LSS Manuel d'utilisateur télécharger pdf

DMN2009LSS

Document number: DS31409 Rev. 6- 2

1 of 5

www.diodes.com

June 2010

DMN2009LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• 8mΩ @ V

= 10V

• 9mΩ @ V

= 4.5V

• 12mΩ @ V

= 2.5V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

20 V

Gate-Source Voltage

GSS

±12

Drain Current (Note 1) Steady

State

= 25°C

= 70°C

9.6

Pulsed Drain Current (Note 3)

42 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)

2 W

Thermal Resistance, Junction to Ambient

62.5 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

Notes: 1. Device mounted on 2 oz, FR-4 PCB, with R

= 62.5°C/W

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SO-8

TOP VIEW

Internal Schematic

TOP VIEW

1 2 3 4 5

Résumé du contenu

Page 1 - DMN2009LSS

DMN2009LSS Document number: DS31409 Rev. 6- 2 1 of 5 www.diodes.com June 2010© Diodes Incorporated DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOS

Page 2

DMN2009LSS Document number: DS31409 Rev. 6- 2 2 of 5 www.diodes.com June 2010© Diodes Incorporated DMN2009LSS Electrical Characteristics @TA =

Page 3

DMN2009LSS Document number: DS31409 Rev. 6- 2 3 of 5 www.diodes.com June 2010© Diodes Incorporated DMN2009LSS Fig. 3 On-Resistance Variation wit

Page 4 - Top View

DMN2009LSS Document number: DS31409 Rev. 6- 2 4 of 5 www.diodes.com June 2010© Diodes Incorporated DMN2009LSS 0.0010.010.11r(t), TRANSIENT THERM

Page 5 - Suggested Pad Layout

DMN2009LSS Document number: DS31409 Rev. 6- 2 5 of 5 www.diodes.com June 2010© Diodes Incorporated DMN2009LSS Suggested Pad Layout

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