Diodes BSP75N Manuel d'utilisateur Page 4

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BSP75N
Issue 4 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static characteristics
Drain-source clamp voltage V
DS(AZ)
60 70 75 V I
D
=10mA
Off-state drain current I
DSS
0.1 3 AV
DS
=12V, V
IN
=0V
Off-state drain current I
DSS
315AV
DS
=32V, V
IN
=0V
Input threshold voltage
(*)
NOTES:
(*) The drain current is limited to a reduced value when V
DS
exceeds a safe level.
V
IN(th)
12.1 VV
DS
=V
GS
, I
D
=1mA
Input current I
IN
0.7 1.2 mA V
IN
=+5V
Input current I
IN
1.5 2.7 mA V
IN
=+7V
Input current I
IN
47mAV
IN
=+10V
Static drain-source on-state
resistance
R
DS(on)
520 675 m V
IN
=+5V, I
D
=0.7A
Static drain-source on-state
resistance
R
DS(on)
385 550 m V
IN
=+10V, I
D
=0.7A
Current limit
(†)
(†) Protection features may operate outside spec for V
IN
<4.5V.
I
D(LIM)
0.7 1.0 1.5 A V
IN
=+5V, V
DS
>5V
Current limit
(†)
I
D(LIM)
1.0 1.8 2.3 A V
IN
=+10V, V
DS
>5V
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)t
on
3.0 10 sR
L
=22, V
DD
=12V,
V
IN
=0 to +10V
Turn-off time (V
IN
to 90% I
D
)t
off
13 20 sR
L
=22, V
DD
=12V,
V
IN
=+10V to 0V
Slew rate on (70 to 50% V
DD
)-dV
DS
/dt
on
820V/sR
L
=22, V
DD
=12V,
V
IN
=0 to +10V
Slew rate off (50 to 70% V
DD
)DV
DS
/dt
off
3.2 10 V/sR
L
=22, V
DD
=12V,
V
IN
=+10V to 0V
Protection functions
(‡)
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Required input voltage for
over temperature protection
V
PROT
4.5 V
Thermal overload trip
temperature
T
JT
150 175 °C
Thermal hysteresis 1 °C
Unclamped single pulse
inductive energy T
j
=25°C
E
AS
550 mJ I
D(ISO)
=0.7A,
V
DD
=32V
Unclamped single pulse
inductive energy T
j
=150°C
200 mJ I
D(ISO)
=0.7A,
V
DD
=32V
Inverse diode
Source drain voltage V
SD
1VV
IN
=0V, -I
D
=1.4A
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