Diodes BS250P Manuel d'utilisateur télécharger pdf

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2  SEPT 93

FEATURES

* 45 Volt V

DS(on)

=14Ω

REFER TO ZVP2106A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

-45 V

Continuous Drain Current at T

amb

=25°C I

-230 mA

Pulsed Drain Current I

-3 A

Gate-Source Voltage V

±20

Power Dissipation at T

amb

=25°C P

tot

700 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

DSS

-45 V

=-100µA, V

=0V

Gate-Source

Threshold Voltage

GS(th)

-1 -3.5 V I

=-1mA, V

Gate Body Leakage I

GSS

-20 nA VGS=-15V, V

=0V

Zero Gate Voltage

Drain Current

DSS

-500 nA V

=0V, V

=-25V

Static Drain-Source

on-State Resistance (1)

DS(on)

Ω

=-10V, I

=-200mA

Forward

Transconductance (1)(2)

150 mS V

=-10V, I

=-200mA

Input Capacitance (2) C

iss

60 pF V

=0V, V

=-10V

f=1MHz

Turn-On Time (2)(3) t

(on)

20 ns

≈-25V, I

=-500mA

Turn-Off Time (2)(3) t

(off)

20 ns

(1) Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2% (2) Sample test

(3) Switching times measured with a 50

Ω source impedance and <5ns rise time on a pulse generator

BS250P

3-28

E-Line

TO92 Compatible

Résumé du contenu

Page 1 - MODE VERTICAL DMOS FET

P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2  SEPT 93FEATURES* 45 Volt VDS*RDS(on)=14ΩREFER TO ZVP2106A FOR GRAPHSABSOLUTE MAXIMUM RATINGS.PARA

Commentaires sur ces manuels

Pas de commentaire

Diodes BS250P Manuel d'utilisateur

Naviguer en ligne ou télécharger Manuel d'utilisateur pour Matériel Diodes BS250P. Diodes BS250P User Manual [es] Manuel d'utilisatio

Résumé du contenu

Commentaires sur ces manuels

Produits connexes et manuels pour Matériel Diodes BS250P