Diodes BC847BLP Manuel d'utilisateur télécharger pdf (Page 2)

BC847BLP

Document number: DS30525 Rev. 11 - 2

2 of 5

www.diodes.com

February 2011

BC847BLP

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

50 V

Collector-Emitter Voltage

CEO

45 V

Emitter-Base Voltage

EBO

6.0 V

Collector Current

100 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

250 mW

Thermal Resistance, Junction to Ambient (Note 4)

500

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

CBO

50 — — V

= 10μA, I

= 0

Collector-Emitter Breakdown Voltage

CEO

45 — — V

= 10mA, I

= 0

Emitter-Base Breakdown Voltage

EBO

6 — — V

= 1μA, I

= 0

DC Current Gain

200 350 450 —

= 5.0V, I

= 2.0mA

Collector-Emitter Saturation Voltage

CE(sat)

—

200

250

600

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Saturation Voltage

BE(sat)

—

700

900

—

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Voltage

BE(ON)

580

—

640

725

700

770

= 5.0V, I

= 2.0mA

= 5.0V, I

= 10mA

Collector-Cutoff Current

CBO

—

5.0

µA

= 30V

= 30V, T

= 150°C

Gain Bandwidth Product

100 — — MHz

= 5.0V, I

= 10mA,

f = 100MHz

Collector-Base Capacitance

CBO

— 3.0 — pF

= 10V, f = 1.0MHz

Notes: 4. Device mounted on FR-4 PCB.

5. Short duration pulse test used to minimize self-heating effect.

1 2 3 4 5

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Diodes BC847BLP Manuel d'utilisateur Page 2

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