2N7002DW
Document number: DS30120 Rev. 16 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
2N7002DW
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
60 V
Gate-Source Voltage
Continuous
V
GSS
±20 V
Pulsed
V
GSS
±40 V
Continuous Drain Current (Note 7) V
GS
= 5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +100°C
I
D
0.23
0.18
0.14
A
Maximum Continuous Body Diode Forward Current (Note 7)
I
S
0.53 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
0.8 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.31
W
T
A
= +70°C
0.2
T
A
= +100°C
0.12
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
410 °C/W
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
0.4
W
T
A
= +70°C
0.25
T
A
= +100°C
0.15
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
θ
JA
318 °C/W
Thermal Resistance, Junction to Case (Note 7) Steady state
R
θ
JC
135 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60 70
⎯
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
⎯ ⎯
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
th
1.0
⎯
2.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS (ON)
⎯
3.2
4.4
7.5
13.5
Ω
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D
ON
0.5 1.0
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
⎯ ⎯
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
V
SD
⎯
0.78 1.5 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
22 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
11 25 pF
Reverse Transfer Capacitance
C
rss
⎯
2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
t
D
on
⎯
7.0 20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V,
R
GEN
= 25Ω
Turn-Off Delay Time
t
D(off)
⎯
11.0 20
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7.
Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
(5 pages)
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