
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 1 - 2
4 of 6
www.diodes.com
October 2012
© Diodes Incorporated
SBR660CTLQ
100
200
300
400
500
600
700
800
900
0.00001 0.0001 0.001 0.01 0.1 1
,
EAK
ANSIEN
IWE
(W)
(PK)
1,000
0
t1, PULSE DURATION TIME (sec)
Figure 9 Single Pulse Maximum Power Dissipation
Single Pulse
R = 58C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
0.001 0.01 0.1 1 10 100 1,000 10,000
t1, PULSE DURATION TIMES (sec)
Figure 10 Transient Thermal Resistance
R (t) = r(t) * R
R = 58°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
0.001
r(t),
ANSIEN
E
MAL
ESIS
AN
E
0.01
0.1
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
Commentaires sur ces manuels