Diodes DMP21D0UT Manuel d'utilisateur télécharger pdf (Page 2)

DMP21D0UT

atasheet Number: DS35297 Rev. 2 - 2

2 of 7

www.diodes.com

March 2012

Product Line o

Diodes Incorporated

DMP21D0UT

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

DSS

-20 V

Gate-Source Voltage

GSS

±8 V

Continuous Drain Current

Steady

State

= 25°C (Note 4)

= 85°C (Note 4)

= 25°C (Note 5)

-0.59

-0.42

-0.65

Pulsed Drain Current (Note 6)

-5.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

0.24 W

Power Dissipation (Note 5)

0.33 W

Thermal Resistance, Junction to Ambient (Note 4)

θJA

525 °C/W

Thermal Resistance, Junction to Ambient (Note 5)

θJA

383 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm FR-4 PCB with high coverage of 2oz copper

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

0.0001 0.001 0.01 0.1 1 10 100 1,000

t , PULSE DURATION TIME (SEC)

Fig. 1 Single Pulse Maximum Power Dissipation

(pk),

EAK

ANSIEN

(W)

Single Pulse

R = 380°C/W

R (t) = r(t) * R

T - T = P * R (t)

θθ

JA JA

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig. 2 Transient Thermal Response

t , PULSE DURATION TIME (s)

0.001

0.01

0.1

r(t),

ANSIEN

MAL

ESIS

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) *

R = 380°C/W

P(pk)

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

1 2 3 4 5 6 7

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Diodes DMP21D0UT Manuel d'utilisateur Page 2

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