Diodes D12V0H1U2LP Manuel d'utilisateur télécharger pdf (Page 2)

D12V0H1U2LP

Document number: DS36751 Rev. 1 - 2

2 of 4

www.diodes.com

April 2014

D12V0H1U2LP

ADVANCE INFORMATION

ADVANCED INFORMATION

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

300 W 8/20µs, per Figure 3

Peak Pulse Current

13 A 8/20µs, per Figure 3

ESD Protection – Contact Discharge

ESD_Contact

±30 kV IEC 61000-4-2 Standard

ESD Protection – Air Discharge

ESD_Air

±30 kV IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)

250 mW

Thermal Resistance, Junction to Ambient (Note 5)

θJA

500

°C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Working Voltage VRWM — — 12.0 V —

Reverse Current (Note 6) IR — 2 50 nA

= V

RWM

= 12.0V

Reverse Breakdown Voltage VBR 13.3

—

15.75 V

= 1mA

Reverse Clamping Voltage

— —

= 5A, t

= 8/20μs

— —

= 13A, t

= 8/20μs

Capacitance

—

80 95 pF

= 0V, f = 1MHz

Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0125175

150

100

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

DISSI

ATI

(mW)

25 10050 75 150

125

250

175

Note 5

200

225

25 50

75 100 125

150

LSE

PEAK POWER OR CURRENT

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

100

175 200

1 2 3 4

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