BSS123W
Document number: DS30368 Rev. 11 - 2
3 of 5
www.diodes.com
October 2013
© Diodes Incorporated
BSS123W
0
0.2
0.7
0
1
3
4
5
I,
AI
-S
E
E
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
2
0.6
0.5
0.1
0.3
0.4
0.8
1.2
1.6
0.1 0.2
, N
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
D
2.0
2.4
0.3 0.4 0.5 0.6
0.7
0.8
0.9
-50 0 75 100 125 150
V
MALIZED
ES
LD V
L
A
E
GS(th),
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
J
1
1.1
1.2
-25 25
50
V = V
I = 250A
DS GS
D
0.4
0.8
1.2
-50
0
75 100 125 150
N
MALIZED
N-
ESIS
AN
E
DS(ON),
T , JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
J
1.6
1.8
2.2
-25 25 50
0.6
1
1.4
2
0
50
0
5
15
20
25
,
A
A
I
AN
E (pF)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
10
40
30
10
20
0
50
100
100
200
,
WE
ISSI
A
I
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Power Derating Curve, Total Package
A
150
200
250
0
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