Diodes BS250F Manuel d'utilisateur télécharger pdf (Page 2)

BS250F

3 - 57

BS250F

TYPICAL CHARACTERISTICS

Output Characteristics

V

DS

- Drain Source Voltage (Volts)

I

D

-

D

r

a

i

n

C

u

r

r

e

nt (Amps

)

-0.8

-0.6

-0.4

0

-0.2

-1.0

Transfer Characteristics

Normalised R

DS(on)

and V

GS(th)

vs Temperature

Junction Temperature (°C)

Nor

m

ali

s

e

d

R

DS(on)

a

nd V

G

S(th)

-40

-20 0 20 40 60 80

120

100 140 160

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Dr

ain

-

S

o

u

rc

e R

e

s

i

s

tance

R

D

S(o

n

)

G

ate

T

h

res

h

o

l

d

V

o

l

tag

e

V

GS

(

T

H

)

ID=0.37A

0-2 -4 -6 -8 -10

-1.0

-0.8

-0.6

-0.4

0

-0.2

0 -10 -20 -30 -40 -50

Saturation Characteristics

On-resistance vs Drain Current

I

D-

Drain Current

(mA)

-6

0

-2

-4

-8

0-2 -4-6-8-10

-10

V

DS-

Drain Source

Voltage (Volts)

RDS(on)-Drain Source On Resistance

(Ω)

Voltage Saturation Characteristics

V

GS-

Gate Source Voltage

(Volts)

-0.6

0

-0.2

-0.4

-0.8

0-2-4-6-8-10

-1.0

VGS=-20V

-16V

-6V

-7V

-8V

-5V

-4V

-16V

-9V

ID=

-

400mA

-200mA

-100mA

VDS=-10V

V

GS-

Gate Source Voltage (Volts)

VGS=-10V

ID=-1mA

VGS=VDS

-1.2

-10V

-9V

-10V

-6V

2.6

180

10

1

100

-10

-100 -1000

VGS=-5V

VGS=-20V

-15V

-20V

-7V

-6V

-7V

-8V

-10V

-12V

-5V

-4.5V

-14V

VGS=

-14V

-12V

I

D

- Drain Curre

n

t (

Amps)

V

DS

- Drain Source Voltage (Volts)

I

D(

O

n

)

-

On-Sta

t

e D

r

ain

Current (Amps

)

TYPICAL CHARACTERISTICS

Transconductance v drain current

I

D

- Drain Current (Amps)

g

fs

-T

r

an

sc

o

n

ducta

n

c

e

(

m

S)

80

60

40

0

20

100

0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

-6

-8

-10

-14

-16

-12

-4

-2

0 0.5 1.0 1.5

0

Q-Gate Charge (nC)

120

Note:VDS=-10V

Transconductance v gate-source voltage

V

GS

-Gate Source Voltage (Volts)

g

f

s

-T

ransconductance (mS)

80

60

40

0

20

100

0-1 -2 -3 -4 -5 -6 -7 -8 -9 -10

120

Note:VDS=-10V

40

30

20

0

10

50

60

0 -10 -20 -30 -40 -50 -60 -70

V

DS

-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-Capac

ita

n

c

e

(

p

F

)

Note:VGS=0V

f=1MHz

Ciss

Coss

Crss

V

GS

-

Gate

So

ur

ce V

o

l

t

age

(V

olts)

1

2

Gate charge v gate-source voltage

VDS=

-20V

Note:ID=- 0.2A

-40V -60V

3 - 56

1 2 3

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