Diodes BFS17N Manuel d'utilisateur télécharger pdf (Page 4)

BFS17N

Document Number DS32160 Rev. 3 - 2

4 of 7

www.diodes.com

October 2012

Product Line o

Diodes Incorporated

BFS17N

NEW PRODUCT

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

CBO

− −

= 10µA

Collector-Emitter Breakdown Voltage (Note 10)

CEO

− −

= 1mA

Emitter-Base Breakdown Voltage

EBO

− −

= 10µA

Collector Cutoff Current

CBO

− −

0.5 µA

= 10V

Emitter Cutoff Current

EBO

− −

0.5 µA

= 2V

Static Forward Current Transfer Ratio (Note 10)

−

180

−

= 5mA, V

= 10V

Collector-Emitter Saturation Voltage (Note 10)

(

sat

)

− −

0.5 V

= 25mA, I

= 5mA

Transition Frequency (Note 10)

1.4 3.2

−

GHz

= 25mA, V

= 5V,

f = 500MHz

Collector Output Capacitance (Note 10)

−

0.8 1.5 pF

= 10V, f = 1MHz

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

1 2 3 4 5 6 7

Product Line o 2
Diodes Incorporated 2
Derating Curve 3
Transient Thermal Impedance 3
Pulse Power Dissipation 3
NEW PRODUCT 4

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