Diodes BC847PN Manuel d'utilisateur télécharger pdf (Page 3)

BC847PN

Document number: DS30278 Rev. 13 - 2

3 of 6

www.diodes.com

November 2013

BC847PN

Electrical Characteristics: NPN, BC847B Type (Q

) (@T

= +25°C unless otherwise specified.)

Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

CBO

50 — — V

= 100µA, I

= 0

Collector-Emitter Breakdown Voltage

CEO

45 — — V

= 10mA, I

= 0

Emitter-Base Breakdown Voltage

EBO

6 — — V

= 100µA, I

= 0

DC Current Gain

200 290 450 —

= 5.0V, I

= 2.0mA

Collector-Emitter Saturation Voltage

CE(sat)

—

200

250

600

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Saturation Voltage

BE(sat)

—

700

900

— mV

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Voltage

BE(on)

580

—

660

—

700

720

= 5.0V, I

= 2.0mA

= 5.0V, I

= 10mA

Collector-Cutoff Current

CBO

—

5.0

µA

= 30V

= 30V, T

= +150°C

Gain Bandwidth Product

100 300 — MHz

= 5.0V, I

= 10mA,

f = 100MHz

Collector-Base Capacitance

CBO

— 3.5 6.0 pF

= 10V, f = 1.0MHz

Noise Figure NF — 2.0 10 dB

= 5V, I

= 200µA,

= 2.0kΩf = 1.0kHz,

f = 200Hz

Note: 7. Short duration pulse test used to minimize self-heating effect.

100

1,000

1.0 10 1000.10.01

h D

FE,

I , COLLECTOR CURRENT (mA)

Figure 2. Typical DC Current Gain vs. Collector Current

(BC847B Type)

0.1

0.2

0.3

0.4

0.5

0.1 1.0 10 100

LLE

-E

ITTE

SATURATION VOLTAGE (V)

I , COLLECTOR CURRENT (mA)

Figure 3. Typical Collector-Emitter Saturation Voltage

vs. Collector Current (BC847B Type)

I = 20

T = 100C

T = 25 C

T = -50C

CAPACITANCE (pF)

V , REVERSE VOLTAGE (V)

Figure 4. Typical Capacitance Characteristics (BC847B Type)

obo

ibo

f = 1MHz

100

1,000

0.1 1.0 10 100

AIN-BANDWID

I , COLLECTOR CURRENT (mA)

Figure 5. Typical Gain-Bandwidth Product

vs. Collector Current (BC847B Type)

T = 25C

V = 10V

V =

1 2 3 4 5 6

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Diodes BC847PN Manuel d'utilisateur Page 3

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