Diodes BC847BFA Manuel d'utilisateur Page 2

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BC847BFA
Document number: DS36019 Rev. 1 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
BC847BFA
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6.0 V
Continuous Collector Current
I
C
100 mA
Peak Pulse Collector Current
I
CM
200 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
435 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
287
C/W
Thermal Resistance, Junction to Lead (Note 6)
R
θJL
150
C/W
Operating and Storage and Temperature Range
T
J
, T
STG
-55 to +150
C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 200 V B
Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
10m 100m 1 10
10m
100m
Single Pulse
T
amb
=25°C
V
CE(sat)
Limited
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
25
50
75
100
125
150
175
200
225
250
275
300
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal ResistanceC/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
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