Diodes BC846BLP4 Manuel d'utilisateur télécharger pdf (Page 4)

BC846BLP4

Document number: DS35751 Rev. 2 - 2

4 of 7

www.diodes.com

July 2012

BC846BLP4

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

CBO

⎯ ⎯

= 100µA, I

= 0

Collector-Emitter Breakdown Voltage (Note 9)

CEO

⎯ ⎯

= 10mA, I

= 0

Emitter-Base Breakdown Voltage

EBO

⎯ ⎯

= 100µA, I

= 0

Collector Cutoff Current

CES

⎯ ⎯

15 nA

= 65V

Collector Cutoff Current

CBO

⎯ ⎯

5.0

µA

= 40V

= 30V, T

= +150°C

ON CHARACTERISTICS (Note 9)

DC Current Gain

200 270 450

⎯ V

= 5V, I

= 2.0mA

Collector-Emitter Saturation Voltage

CE(sat)

⎯

220

250

600

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Saturation Voltage

BE(sat)

⎯

720

870

900

⎯

= 10mA, I

= 0.5mA

= 100mA, I

= 5.0mA

Base-Emitter Voltage

BE(on)

580

⎯

650

⎯

700

770

= 5V, I

= 2.0mA

= 5V, I

= 10mA

SMALL SIGNAL CHARACTERISTICS (Note 9)

Input Capacitance

ibo

⎯

6.7

⎯

= 5V, f = 1.0MHz

Output Capacitance

obo

⎯

1.76

⎯

= 10V, f = 1.0MHz

Current Gain-Bandwidth Product

100 300

⎯

MHz

= 5V, I

= 10mA, f = 100MHz

Noise Figure NF

⎯

2 10 dB

= 5V, I

= 200µA, R

= 2.0kΩ,

f = 1.0kHz, Δf = 200Hz

Delay time

⎯

11.2

⎯

= 30V,

= 150mA,

= I

= 15mA

Rise time

⎯

59.7

⎯

Storage time

⎯

190.8

⎯

Fall time

⎯

108.6

⎯

Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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