BAV99BRV(A)
Document number: DS35312 Rev. 5 - 2
2 of 4
www.diodes.com
April 2012
© Diodes Incorporated
BAV99BR
/
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage
V
R
RMS
53 V
Forward Continuous Current (Note 5)
I
FM
215 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
s
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
350 mW
Thermal Resistance Junction to Ambient Air (Note 5)
R
JA
357
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V
BR
R
75
⎯
V
I
R
= 100μA
Forward Voltage
V
F
⎯
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current (Note 6)
I
R
⎯
2.5
50
30
25
μA
μA
μA
nA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance
C
T
⎯
1.5 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout.
6. Short duration pulse test used to minimize self-heating effect.
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