Diodes BAS16VV Manuel d'utilisateur télécharger pdf (Page 2)

BAS16VV

Document number: DS35791 Rev. 3 - 2

2 of 4

www.diodes.com

June 2012

BAS16V

Maximum Ratings (@T

= 25°C unless otherwise specified.)

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage

100 V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

100 V

RMS Reverse Voltage

(

RMS

)

71 V

Forward Continuous Current (Note 5)

200 mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

@ t = 1.0ms

@ t = 1.0s

FSM

4.0

1.0

0.5

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

350 mW

Thermal Resistance Junction to Ambient Air (Note 5)

357

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

= 25°C unless otherwise specified.)

Characteristic Symbol Min Max Unit Test Condition

Reverse Breakdown Voltage (Note 6)

(

)

100

⎯

= 100μA

Forward Voltage

⎯

0.715

= 1.0mA

⎯

0.855

= 10mA

⎯

1.0

= 50mA

⎯

1.25

= 150mA

Leakage Current (Note 6)

⎯

0.5

μA

= 80V

⎯

μA

= 80V, T

= 150°C

⎯

μA

= 25V, T

= 150°C

⎯

30 nA

= 25V

Total Capacitance

⎯

1.5 pF

= 0, f = 1.0MHz

Reverse Recovery Time

⎯

4.0 ns

= I

= 10mA,

= 0.1 x I

, R

= 100Ω

Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout.

6. Short duration pulse test used to minimize self-heating effect.

100

150

200

250

250 50 75 100 125 150

DISSI

(mW)

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve, Total Package

300

350

Note 5

R = 357°C/W

0 0.4 0.8 1.2 1.6

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics, Per Element

0.1

0.01

0.001

I, I

(A)

1 2 3 4

BAS16VV 1

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